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Therefore, ICP etching is a promising process for pattern transfer required during microelectronic and optoelectronic fabrication.
Resonator–quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE).
Therefore, removing the substrate is an essential step in producing an R-QWIP.
Since this detector relies on constructive interference between the incident light and the reflected light, the designed detector dimensions have to be produced accurately.
To fabricate R-QWIP focal plane arrays (FPAs), two optimized ICP etching processes are developed.